Dr. Chia-Yen Huang was born in Taipei, Taiwan, 1985. He received his bachelor’s degree in Materials from National Taiwan University in 2007 and doctoral degree in Materials from University of California, Santa Barbara. After Ph.D. degree, he has serviced in industry, academia, and government-funded research organization (ITRI) in Taiwan for 8 years, then joined National Yang Ming Chiao Tung University as an new faculty in 2021. Dr. Huang’s research area focuses on the materials science and device engineering of III-nitride based optoelectronics from red to deep-UV spectral region.

Kenjiro Uesugi received his B.E. and M.S. degrees from The University of Tokyo in 2011 and 2013, respectively. In 2018, he joined Mie University and is currently an assistant professor. He received his Ph.D. in 2019 from Mie University. His current research interest involves the growth of high-quality Al(Ga)N and its application to DUV light-emitting devices or high-power electronic devices.

Okhyun Nam is a professor in the department of Nano and Semiconductor Engineering at the TU-Korea (Tech University of Korea), South Korea. His teaching and research interests are in the areas of the UWBG (ultra-wide bandgap) semiconductor materials such as AlGaN and diamond and their device growth and fabrications for the electronic and optoelectronic applications in the future. After obtaining a Ph.D. from Yonsei University in South Korea in 1994, Professor Nam has studied the III-nitride semiconductors at the KIST and North Carolina State University as a post-doctoral researcher between 1995 and 1998. Also, he has studied and developed III-Nitride blue laser diodes between 1998 and 2007 at the Samsung Advance Institute of Technology. He has been working at TU-Korea since 2007 and published over 150 SCIE international journals and has 60 patents.

Jonghwan Kim, Ph. D., is interested in novel phenomena emerging in low-dimension nanomaterials for fascinating optical science and optoelectronics. He has obtained Ph.D. in Physics at UC Berkeley in 2015 with the focus on ultrafast optical spectroscopy/microscopy, high quality 2D material fabrication and nano-device application. In POSTECH, as an assistant professor started from 2017, he has been constructing an interdisciplinary research team at the department of materials science and engineering to connect the bridge between fundamental physics and advanced material engineering.

Professor at Georgia Institute of Technology (GIT)/ECE School, President of Georgia Tech-Lorraine, the European Campus of GIT in France, Co-Founder and Co-President of Lafayette Institute a platform of Innovation and Technology Transfer in optoelectronics. He worked in R&D as senior researcher and group leader on Epitaxy by MOCVD at CNET /France Telecom (France) for more than 8 years and one year at Optoplus/Alcatel (France). In 1999, he joined Bell-Labs at Lucent Technologies (USA), as Manager of Epitaxy and materials characterization for High-Speed Optical Fiber Communication. He kept this position with Agere Systems (USA), and then he worked as R&D and Fab Manager at TriQuint Semiconductors (USA). Dr. Ougazzaden joined Georgia Institute of Technology in 2005. He is leading a group of research in the field of Epitaxy and device fabrication based on III-Nitride semiconductors, boron nitride and its alloys. He has authored more than 450 international scientific papers and communications and holds 27 patents.

Hyeon Suk Shin is a professor at Department of Chemistry and Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Korea. He received his PhD from Department of Chemistry at POSTECH in 2002. After working as a postdoctoral fellow at University of Cambridge, UK and subsequently as a research Professor at POSTECH, he joined UNIST in 2008. He received Sigma-Aldrich Excellent Chemist Award (Korean Chemical Society) in 2020, Basic Researcher of the Year award (Ministry of Science and ICT, Republic of Korea) in 2020, Creative Knowledge Award (Minster Award by Ministry of Science, ICT, and Future Planning) in 2015, outstanding researcher award (Materials Chemistry Division, KCS) in 2015, the Faculty of the Year award of UNIST in 2014, and the Minister award of Ministry of Knowledge Economy, Korea in 2012. His current research is focused on 2D materials, including graphene, h-BN, transition metal dichalcogenides, and their heterostructures, and their applications for electrocatalysts and (opto)electronic devices.

Soon-Ku Hong is a Professor in the Department of Materials Science and Engineering at the Chungnam National University in Korea since 2003. He received his B.S. in metallurgical engineering from Korea University in 1989, M.S. in materials science from the Korea Advanced Institute of Science and Technology in 1992, and Ph.D. in applied physics from Tohoku University in 2001. He worked at SKC (1992~1994) and at Samsung Advanced Institute of Science (1994~1998). After completing his PhD degree, he performed postdoctoral work in the Brown University. He has been a faculty member in the Department of Materials Science and Engineering at the Chungnam National University since 2001. He has worked on epitaxy and TEM characterization of ZnO, GaN, SiC, and Ga₂O₃.

Dr. Seong-Woo Kim moved to Japan after military service in Korea. He has been in Japan for 27 years. During his exchange program, he attended Nippon Institute of Technology to obtain Ph-D degree on the subject of MOCVD growth on GaN device. After graduate, He joined Adamant Namiki Precision Jewel Co., Ltd. He worked in R&D division for 7 years to develop GaN wafer production technologies, such as bulk GaN growth by HVPE, CMP process of GaN. Recently he is tackling novel Hetero Epitaxial growth of Diamond with Micro Wave Plasma CVD.

James S. Speck is a Professor in the Materials Department at the University of California Santa Barbara. He received his B.S.M.E. from the University of Michigan in 1983 and his S.M. and Sc.D. in materials science from the Massachusetts Institute of Technology in 1985 and 1989, respectively. He has been a faculty member in the Materials Department At UCSB since 1990. He has worked extensively on the materials science of GaN and related alloys.

Jiandong Ye finished his PhD at the Department of Physics, Nanjing University, China. He served as a Senior Research Engineer and Queen Elizabeth II Fellow at the Institute of Microelectronics, A*STAR, Singapore and the Australian National University, respectively, during 2006 to 2015. Since 2011, he holds a professorship at School of Electronic Science and Engineering, Nanjing University. His research interests includes the fundamental and applied research of the wide-bandgap semiconductor materials and devices.

Motoaki Iwaya received the B.A., M.S., and Ph.D. degrees in electrical and electronic engineering from Meijo University, Japan, in 1998, 2000, and 2003, respectively. From 2003 to 2007, he was an Assistant Professor at Meijo University, where he was a Researcher of Group-III nitride materials and frontier devices in Prof. Akasaki and Amano’s Group. He became an Associate Professor and Professor at Meijo University in 2007 and 2020, respectively. His experience covers all the nitride-based semiconductor optoelectronic and electronic devices, such as UV/blue/green/white light emitting diodes, UV/violet laser diodes, field effect transistors, photo detectors, solar cells, and MOVPE epitaxial growth, device processing, and crystal characterizations. He is a member of the Japan Society of Applied Physics, the Japanese Association for Crystal Growth, and SPIE.

Siddharth Rajan is Professor of Electrical and Computer Engineering, and Materials Science and Engineering departments at The Ohio State University, where he joined the faculty in 2008. He received his PhD in Electrical and Computer Engineering in 2006 from University of California, Santa Barbara, and has held research positions at UC Santa Barbara and GE Global Research. He has co-authored 7 book chapters, over 160 journal papers, and over 150 invited and contributed presentations in the area of semiconductor materials and devices.

Dr. Wang is a full Professor of School of Physics at Peking University. He joined the faculty on May 2008, after more than 6 years’ postdoctoral research at Chiba University and Japan Science Technology Agency, Japan. He has received the China National Funds for Distinguished Young Scientists in 2012 and has been awarded Changjiang Distinguished Professor by Ministry of Education in 2014. He mainly concentrates on III-nitrides compound semiconductors including epitaxy and device fabrication. He is the author or co-author of 200+ refereed journal articles with over 4000 citations and has delivered over 40 invited talks at scientific conferences and contributed three chapters in three books.

Dr. Wang is a full Professor of School of Physics at Peking University. He joined the faculty on May 2008, after more than 6 years’ postdoctoral research at Chiba University and Japan Science Technology Agency, Japan. He has received the China National Funds for Distinguished Young Scientists in 2012 and has been awarded Changjiang Distinguished Professor by Ministry of Education in 2014. He mainly concentrates on III-nitrides compound semiconductors including epitaxy and device fabrication. He is the author or co-author of 200+ refereed journal articles with over 4000 citations and has delivered over 40 invited talks at scientific conferences and contributed three chapters in three books.

Tim Wernicke is group leader of the Nitride Epitaxy Laboratory at the Insitute of Solid State Physics, Technische Universität Berlin since 2010. His special interests are epitaxy of III-nitrides, growth and analysis of AlGaN materials and fabrication and analysis UV-LEDs and UV-lasers.

Dr. Liu is currently a Professor of School of Electronic Science and Engineering at Nanjing University. He joined the faculty on August 2008 after he received his Ph.D. degree in solid state electronics from Nanjing University, Nanjing, China in 2008. He previously worked in the Chinese University of Hong Kong as a visiting scholar in 2009 and the University of Sheffield as a postdoctoral researcher from 2012 to 2014. His interests include the growth of III-nitride semiconductors using metal–organic chemical vapor deposition(MOCVD) and molecular beam epitaxy(MBE), and fabrication of III-nitride nanostructures and optoelectronic devices.

Hideaki Murotani received the B.E., M.E., and Ph.D. degrees in electrical and electronic engineering from Yamaguchi University, Yamaguchi, Japan, in 2005, 2007, and 2010, respectively. He is currently an associate professor at Department of Computer Science and Electronic Engineering, National Institute of Technology, Tokuyama College.

Kengo Nagata received a B.A. and M.E. degrees from Faculty of Science and Technology, Meijo University from 2009 to 2011. Since 2011 he has been an engineer in Toyoda Gosei Co., Ltd. He has experienced nitride-based light emitting devices such as UV / blue / green / white light emitting diodes, UV laser diodes, MOVPE epitaxial growth, device processing, and crystal characterization. He is currently working toward the Ph.D in Graduate School of Engineering, Nagoya university from 2019 and studying AlGaN growth by metalorganic vapor phase epitaxy and characteristics of deep UV emitters. He is a member of The Japan Society of Applied Physics and Japanese Association for Crystal Growth.